◆ Using high contrast, real-time SEM observation and processing endpoint detection functions, ultra-thin samples with a thickness of less than 20 nm can be prepared
Real-time SEM observation during FIB processing *2 cases
Sample: NAND flash memory
Accelerating voltage: 1 kV
FOV: 0.6 µm
◆ The processing direction control technology (Micro-sampling®*3 system (optional) + high-precision/high-speed sample stage*) has high hopes for suppressing the curtain effect and making film samples with uniform thickness.
Processing direction control During normal processing
◆ Triple Beam®*1 (optional) can improve processing efficiency, and can automatically eliminate FIB damage
EB: Electron Beam
FIB: Focused Ion Beam (focused ion beam)
Ar: Ar ion beam